Mitsubishi PM20CEE060

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Specifications:

Brand: Mitsubishi
Model: PM20CEE060 IGBT
Voltage Rating: 100 V (Collector–Emitter)
Current Rating: 20 A (Collector Current)
Minimum Operating Temperature: –20 °C
Maximum Operating Temperature: +70 °C
Device Type: Insulated Gate Bipolar Transistor (IGBT) Module
Application Areas: Inverters, Small UPS systems, Motion and Servo Motor Control, AC Motor Control Systems

Features:

High collector–emitter voltage capability of 100 V
Supports collector current up to 20 A
Advanced built-in protection circuitry for reliable operation
Optimized gate drive design ensures stable and efficient switching
Improved power cycle tolerance for long-term durability
Suitable for high-frequency and high-power switching applications
Maintains consistent performance across varying temperature conditions

About This Product

The Mitsubishi PM20CEE060 IGBT is a high-performance power semiconductor module designed for efficient switching in industrial and power control applications. Combining the insulated gate technology of MOSFETs with the high current handling capability of bipolar transistors, this IGBT module delivers excellent electrical performance and reliability.

Its enhanced protection circuitry and optimized gate drive ensure stable operation even in demanding environments. With improved power cycle tolerance and the ability to operate efficiently at high frequencies, the PM20CEE060 is ideal for use in inverters, UPS systems, and motor control applications where high current and voltage performance are required.

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